MARC details
| 000 -LEADER |
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| fixed length control field |
07904cam a22003977i 4500 |
| 001 - CONTROL NUMBER |
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| control field |
15105889 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
OSt |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20160322104413.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
071207s2008 nyua g b 001 0 eng d |
| 010 ## - LIBRARY OF CONGRESS CONTROL NUMBER |
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| LC control number |
2007942883 |
| 015 ## - NATIONAL BIBLIOGRAPHY NUMBER |
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| National bibliography number |
07,N33,0729 |
| Source |
dnb |
| 016 7# - NATIONAL BIBLIOGRAPHIC AGENCY CONTROL NUMBER |
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| Record control number |
014276082 |
| Source |
Uk |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
9780387745138 (hbk) |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
0387745130 (hbk) |
| 028 52 - PUBLISHER NUMBER |
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| Publisher number |
12028962 |
| 040 ## - CATALOGING SOURCE |
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| Transcribing agency |
NCL |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER |
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| Classification number |
621.38152 |
| Item number |
VAS-P 2008 9073 |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
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| Personal name |
Vashchenko, V. A., |
| Relator term |
author. |
| 245 10 - TITLE STATEMENT |
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| Title |
Physical limitations of semiconductor devices |
| Statement of responsibility, etc. |
/ by V.A. Vashchenko and V.F. Sinkevitch. |
| 264 #1 - PRODUCTION, PUBLICATION, DISTRIBUTION, MANUFACTURE, AND COPYRIGHT NOTICE |
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| Place of production, publication, distribution, manufacture |
New York : |
| Name of producer, publisher, distributor, manufacturer |
Springer, |
| Date of production, publication, distribution, manufacture, or copyright notice |
[2008] |
| 300 ## - PHYSICAL DESCRIPTION |
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| Extent |
xiii, 330 pages : |
| Other physical details |
illustrations ; |
| Dimensions |
25 cm |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
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| Bibliography, etc |
Includes bibliographical references (pages 309-324) and index. |
| 505 00 - FORMATTED CONTENTS NOTE |
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| Miscellaneous information |
Chapter 1 |
| Title |
Failures of Semiconductor Device |
| Miscellaneous information |
1 -- |
| -- |
1.1 |
| Title |
Catastrophic and degradation failure mechanisms |
| Miscellaneous information |
3 -- |
| -- |
1.2 |
| Title |
Transistor: structure, operation regimes, failure mechanisms |
| Miscellaneous information |
5 -- |
| -- |
1.2.1 |
| Title |
Bipolar transistors |
| Miscellaneous information |
6 -- |
| -- |
1.2.2 |
| Title |
Silicon field effect transistors |
| Miscellaneous information |
9 -- |
| -- |
1.2.3 |
| Title |
Compound semiconductor field-effect transistors |
| Miscellaneous information |
11 -- |
| -- |
1.2.4 |
| Title |
Specifics of transistor applications |
| Miscellaneous information |
13 -- |
| -- |
1.3 |
| Title |
Operation regime and reliability |
| Miscellaneous information |
13 -- |
| -- |
1.3.1 |
| Title |
Time before failure and failure rate |
| Miscellaneous information |
13 -- |
| -- |
1.3.2 |
| Title |
Safe operating area |
| Miscellaneous information |
16 -- |
| -- |
1.4 |
| Title |
Breakdown and Instability |
| Miscellaneous information |
19 -- |
| -- |
Chapter 2 |
| Title |
Theoretical Basis of Current Instability in Transistor Structures |
| Miscellaneous information |
25 -- |
| -- |
2.1 |
| Title |
Basic equations |
| Miscellaneous information |
25 -- |
| -- |
2.2 |
| Title |
Current filamentation in uniform structures |
| Miscellaneous information |
29 -- |
| -- |
2.2.1 |
| Title |
Fluctuation instability |
| Miscellaneous information |
29 -- |
| -- |
2.2.2 |
| Title |
Bifurcation, soft and abrupt filamentation |
| Miscellaneous information |
32 -- |
| -- |
2.3 |
| Title |
Current filamentation in nonuniform structures |
| Miscellaneous information |
37 -- |
| -- |
2.3.1 |
| Title |
Splitting of I-V characteristic |
| Miscellaneous information |
38 -- |
| -- |
2.3.2 |
| Title |
Critical regime |
| Miscellaneous information |
40 -- |
| -- |
2.3.3 |
| Title |
Edge and ordinary filaments |
| Miscellaneous information |
41 -- |
| -- |
2.3.4 |
| Title |
Localization and stability of solitary filaments |
| Miscellaneous information |
43 -- |
| -- |
2.3.5 |
| Title |
Current filamentation at positive differential conductivity |
| Miscellaneous information |
48 -- |
| -- |
2.4 |
| Title |
Real inhomogeneity and current filamentation |
| Miscellaneous information |
50 -- |
| -- |
Chapter 3 |
| Title |
Thermal Instability Mechanism |
| Miscellaneous information |
53 -- |
| -- |
3.1 |
| Title |
Emitter current filamentation in bipolar transistors |
| Miscellaneous information |
53 -- |
| -- |
3.1.1 |
| Title |
Some experimental results |
| Miscellaneous information |
53 -- |
| -- |
3.1.2 |
| Title |
Thermoelectrical model and stability criteria |
| Miscellaneous information |
55 -- |
| -- |
3.1.3 |
| Title |
Informative characteristic |
| Miscellaneous information |
63 -- |
| -- |
3.1.4 |
| Title |
Local defect and inhomogeneity impact |
| Miscellaneous information |
66 -- |
| -- |
3.1.5 |
| Title |
Delay time |
| Miscellaneous information |
74 -- |
| -- |
3.1.6 |
| Title |
Three-dimensional thermal model and design optimization |
| Miscellaneous information |
78 -- |
| -- |
3.1.7 |
| Title |
Current filamentation in dynamic regimes |
| Miscellaneous information |
82 -- |
| -- |
3.2 |
| Title |
Filamentation of channel current in MOSFETs |
| Miscellaneous information |
87 -- |
| -- |
3.2.1 |
| Title |
Criterion for channel current filamentation |
| Miscellaneous information |
88 -- |
| -- |
3.3 |
| Title |
Thermal breakdown |
| Miscellaneous information |
92 -- |
| -- |
3.3.1 |
| Title |
Thermal breakdown in bipolar transistors |
| Miscellaneous information |
94 -- |
| -- |
3.3.2 |
| Title |
Thermal breakdown in MOSFETs |
| Miscellaneous information |
99 -- |
| -- |
3.3.3 |
| Title |
Thermal breakdown in GaAs MESFETs |
| Miscellaneous information |
102 -- |
| -- |
3.4 |
| Title |
Avalanche-thermal breakdown |
| Miscellaneous information |
104 -- |
| -- |
3.5 |
| Title |
Peculiarities of avalanche thermal instability in JFETs and MESFETs |
| Miscellaneous information |
108 -- |
| -- |
Chapter 4 |
| Title |
Isothermal Current Instability in Silicon BJT and MOSFETs |
| Miscellaneous information |
111 -- |
| -- |
4.1 |
| Title |
Avalanche injection in elementary semiconductor structures |
| Miscellaneous information |
111 -- |
| -- |
4.1.1 |
| Title |
Reversed biased p-n junction |
| Miscellaneous information |
112 -- |
| -- |
4.1.2 |
| Title |
Avalanche breakdown in p-i-n diode |
| Miscellaneous information |
115 -- |
| -- |
4.1.3 |
| Title |
Avalanche injection in n[superscript +]-n-n[superscript +] diode |
| Miscellaneous information |
116 -- |
| -- |
4.1.4 |
| Title |
Kinetics of avalanche injection in p-n-n[superscript +] structures |
| Miscellaneous information |
118 -- |
| -- |
4.2 |
| Title |
Isothermal instability in bipolar transistors |
| Miscellaneous information |
120 -- |
| -- |
4.2.1 |
| Title |
Isothermal instability in diode operation regimes |
| Miscellaneous information |
121 -- |
| -- |
4.2.2 |
| Title |
Avalanche injection in common-emitter circuit |
| Miscellaneous information |
124 -- |
| -- |
4.2.3 |
| Title |
Avalanche injection in common-base circuit |
| Miscellaneous information |
130 -- |
| -- |
4.2.4 |
| Title |
Criteria of isothermal current filamentation |
| Miscellaneous information |
132 -- |
| -- |
4.2.5 |
| Title |
Some ways of isothermal instability suppression |
| Miscellaneous information |
136 -- |
| -- |
4.3 |
| Title |
Isothermal current instability in MOSFET |
| Miscellaneous information |
137 -- |
| -- |
4.3.1 |
| Title |
Field distribution in MOSFET structures and critical operation regimes |
| Miscellaneous information |
139 -- |
| -- |
4.3.2 |
| Title |
Isothermal current filamentation in power planar MOSFETs in dc regime |
| Miscellaneous information |
142 -- |
| -- |
4.3.3 |
| Title |
Isothermal instability in vertical MOSFETs |
| Miscellaneous information |
152 -- |
| -- |
4.4 |
| Title |
Numerical simulation of electrical instability and current filamentation in NMOS devices |
| Miscellaneous information |
157 -- |
| -- |
Chapter 5 |
| Title |
Isothermal Instability in Compound Semiconductor Devices |
| Miscellaneous information |
169 -- |
| -- |
5.1 |
| Title |
Avalanche breakdown in MESFETs |
| Miscellaneous information |
170 -- |
| -- |
5.2 |
| Title |
Drain-source avalanche-injection instability and filamentation |
| Miscellaneous information |
177 -- |
| -- |
5.2.1 |
| Title |
Experimental observation of current instability and filamentation in GaAs MESFETs |
| Miscellaneous information |
178 -- |
| -- |
5.2.2 |
| Title |
Specific of electrical burnout in large-signal operation |
| Miscellaneous information |
183 -- |
| -- |
5.2.3 |
| Title |
Current instability and filamentation in MODFET structures and short-channel MESFETs |
| Miscellaneous information |
187 -- |
| -- |
5.2.4 |
| Title |
Numerical simulation of the avalanche-injection instability in MESFET structures |
| Miscellaneous information |
191 -- |
| -- |
5.2.5 |
| Title |
Numerical simulation of the avalanche-injection filamentation in GaAs structures |
| Miscellaneous information |
198 -- |
| -- |
5.2.6 |
| Title |
The role of contact n[superscript +]-regions. Multiple current filament formation |
| Miscellaneous information |
203 -- |
| -- |
5.3 |
| Title |
Double avalanche-injection instability and filamentation at Schottky gate breakdown in MESFETs |
| Miscellaneous information |
209 -- |
| -- |
5.4 |
| Title |
Microplasma effect at the MESFET breakdown |
| Miscellaneous information |
219 -- |
| -- |
5.4.1 |
| Title |
Microplasma at the Schottky gate breakdown in MESFETs |
| Miscellaneous information |
220 -- |
| -- |
5.4.2 |
| Title |
Microplasma formation in n[superscript +]-i-n[superscript +] structures |
| Miscellaneous information |
232 -- |
| -- |
Chapter 6 |
| Title |
Degradation Instabilities |
| Miscellaneous information |
237 -- |
| -- |
6.1 |
| Title |
Electromigration |
| Miscellaneous information |
238 -- |
| -- |
6.2 |
| Title |
Mutual diffusion of materials |
| Miscellaneous information |
245 -- |
| -- |
6.3 |
| Title |
Charge instability |
| Miscellaneous information |
249 -- |
| -- |
6.4 |
| Title |
Degradation phenomena in dynamic regimes |
| Miscellaneous information |
253 -- |
| -- |
6.5 |
| Title |
Degradation instability |
| Miscellaneous information |
254 -- |
| -- |
Chapter 7 |
| Title |
Conductivity Modulation in ESD devices |
| Miscellaneous information |
259 -- |
| -- |
7.1 |
| Title |
ESD Design |
| Miscellaneous information |
259 -- |
| -- |
7.1.1 |
| Title |
The field of ESD protection |
| Miscellaneous information |
260 -- |
| -- |
7.1.2 |
| Title |
ESD devices |
| Miscellaneous information |
264 -- |
| -- |
7.2 |
| Title |
Spatial thermal runway in ESD devices |
| Miscellaneous information |
270 -- |
| -- |
7.3 |
| Title |
3D Simulation of current instability in snapback NMOS devices |
| Miscellaneous information |
274 -- |
| -- |
7.4 |
| Title |
Conductivity modulation in BJT and Bipolar SCRs |
| Miscellaneous information |
275 -- |
| -- |
7.5 |
| Title |
Device-level physical ESD design |
| Miscellaneous information |
282 -- |
| -- |
7.5.1 |
| Title |
Self-Protection |
| Miscellaneous information |
282 -- |
| -- |
7.5.2 |
| Title |
Mixed device-circuit dual-mode solutions |
| Miscellaneous information |
286 -- |
| -- |
7.6 |
| Title |
Device-level positive and negative feedback |
| Miscellaneous information |
290 -- |
| -- |
Chapter 8 |
| Title |
Physical Approach to Reliability |
| Miscellaneous information |
297 -- |
| -- |
8.1 |
| Title |
Reliability assurance at the stage of its development |
| Miscellaneous information |
298 -- |
| -- |
8.2 |
| Title |
Reliability assurance on a production phase |
| Miscellaneous information |
301 -- |
| -- |
8.3 |
| Title |
Estimation of reliability using accelerated tests |
| Miscellaneous information |
304. |
| 520 1# - SUMMARY, ETC. |
|---|
| Summary, etc. |
"Physical Limitations of Semiconductor Devices provides an in-depth understanding of the phenomena and regularities that play a critical role in the limitation of semiconductor device capabilities. It discusses how thermo-electrical breakdown, conductivity modulation, and electrical and spatial current instability phenomena affect the limitations of the devices. The authors give examples of the phenomena ranging from elementary semiconductor diode structures to discrete power and integrated components. They also show circuits for both silicon and compound semiconductor devices." "The material covers different levels of complexity including phenomenological, analytical, and numerical simulation. The material also explores the most complex phenomena of current filamentation and the impact of local structure defects, physical safe operating area limitations, and various scenarios of catastrophic failures in semiconductor devices. The emphasis of the book is on the physical approach to reliability assurance, safe operating area, and ESD problems." "Physical Limitations of Semiconductor Devices provides an important link between the theoretical aspects of the physics of semiconductor devices, non-linear physics, and the practical applications of microelectronics."--Jacket. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors |
| General subdivision |
Defects. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors |
| General subdivision |
Reliability. |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors. |
| Authority record control number |
(OCoLC)fst01112198 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors |
| General subdivision |
Defects. |
| Authority record control number |
(OCoLC)fst01112211 |
| 650 #7 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Semiconductors |
| General subdivision |
Reliability. |
| Authority record control number |
(OCoLC)fst01112249 |
| 650 07 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Halbleiterbauelement. |
| 650 07 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Reliabilität. |
| 650 07 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name as entry element |
Versagen. |
| 700 1# - ADDED ENTRY--PERSONAL NAME |
|---|
| Personal name |
Sinkevitch, V. F., |
| Relator term |
author. |
| 942 ## - ADDED ENTRY ELEMENTS (KOHA) |
|---|
| Source of classification or shelving scheme |
|
| Koha item type |
Books |
