Physical limitations of semiconductor devices / by V.A. Vashchenko and V.F. Sinkevitch.

By: Vashchenko, V. A [author.]
Contributor(s): Sinkevitch, V. F [author.]
Material type: TextTextPublisher: New York : Springer, [2008]Description: xiii, 330 pages : illustrations ; 25 cmISBN: 9780387745138 (hbk); 0387745130 (hbk)Subject(s): Semiconductors | Semiconductors -- Defects | Semiconductors -- Reliability | Semiconductors | Semiconductors -- Defects | Semiconductors -- Reliability | Halbleiterbauelement | Reliabilit├Ąt | VersagenDDC classification: 621.38152
Contents:
Failures of Semiconductor Device Catastrophic and degradation failure mechanisms Transistor: structure, operation regimes, failure mechanisms Bipolar transistors Silicon field effect transistors Compound semiconductor field-effect transistors Specifics of transistor applications Operation regime and reliability Time before failure and failure rate Safe operating area Breakdown and Instability Theoretical Basis of Current Instability in Transistor Structures Basic equations Current filamentation in uniform structures Fluctuation instability Bifurcation, soft and abrupt filamentation Current filamentation in nonuniform structures Splitting of I-V characteristic Critical regime Edge and ordinary filaments Localization and stability of solitary filaments Current filamentation at positive differential conductivity Real inhomogeneity and current filamentation Thermal Instability Mechanism Emitter current filamentation in bipolar transistors Some experimental results Thermoelectrical model and stability criteria Informative characteristic Local defect and inhomogeneity impact Delay time Three-dimensional thermal model and design optimization Current filamentation in dynamic regimes Filamentation of channel current in MOSFETs Criterion for channel current filamentation Thermal breakdown Thermal breakdown in bipolar transistors Thermal breakdown in MOSFETs Thermal breakdown in GaAs MESFETs Avalanche-thermal breakdown Peculiarities of avalanche thermal instability in JFETs and MESFETs Isothermal Current Instability in Silicon BJT and MOSFETs Avalanche injection in elementary semiconductor structures Reversed biased p-n junction Avalanche breakdown in p-i-n diode Avalanche injection in n[superscript +]-n-n[superscript +] diode Kinetics of avalanche injection in p-n-n[superscript +] structures Isothermal instability in bipolar transistors Isothermal instability in diode operation regimes Avalanche injection in common-emitter circuit Avalanche injection in common-base circuit Criteria of isothermal current filamentation Some ways of isothermal instability suppression Isothermal current instability in MOSFET Field distribution in MOSFET structures and critical operation regimes Isothermal current filamentation in power planar MOSFETs in dc regime Isothermal instability in vertical MOSFETs Numerical simulation of electrical instability and current filamentation in NMOS devices Isothermal Instability in Compound Semiconductor Devices Avalanche breakdown in MESFETs Drain-source avalanche-injection instability and filamentation Experimental observation of current instability and filamentation in GaAs MESFETs Specific of electrical burnout in large-signal operation Current instability and filamentation in MODFET structures and short-channel MESFETs Numerical simulation of the avalanche-injection instability in MESFET structures Numerical simulation of the avalanche-injection filamentation in GaAs structures The role of contact n[superscript +]-regions. Multiple current filament formation Double avalanche-injection instability and filamentation at Schottky gate breakdown in MESFETs Microplasma effect at the MESFET breakdown Microplasma at the Schottky gate breakdown in MESFETs Microplasma formation in n[superscript +]-i-n[superscript +] structures Degradation Instabilities Electromigration Mutual diffusion of materials Charge instability Degradation phenomena in dynamic regimes Degradation instability Conductivity Modulation in ESD devices ESD Design The field of ESD protection ESD devices Spatial thermal runway in ESD devices 3D Simulation of current instability in snapback NMOS devices Conductivity modulation in BJT and Bipolar SCRs Device-level physical ESD design Self-Protection Mixed device-circuit dual-mode solutions Device-level positive and negative feedback Physical Approach to Reliability Reliability assurance at the stage of its development Reliability assurance on a production phase Estimation of reliability using accelerated tests
Review: "Physical Limitations of Semiconductor Devices provides an in-depth understanding of the phenomena and regularities that play a critical role in the limitation of semiconductor device capabilities. It discusses how thermo-electrical breakdown, conductivity modulation, and electrical and spatial current instability phenomena affect the limitations of the devices. The authors give examples of the phenomena ranging from elementary semiconductor diode structures to discrete power and integrated components. They also show circuits for both silicon and compound semiconductor devices." "The material covers different levels of complexity including phenomenological, analytical, and numerical simulation. The material also explores the most complex phenomena of current filamentation and the impact of local structure defects, physical safe operating area limitations, and various scenarios of catastrophic failures in semiconductor devices. The emphasis of the book is on the physical approach to reliability assurance, safe operating area, and ESD problems." "Physical Limitations of Semiconductor Devices provides an important link between the theoretical aspects of the physics of semiconductor devices, non-linear physics, and the practical applications of microelectronics."--Jacket.
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Item type Current location Call number Status Date due Barcode Item holds
Books Books Namal Library
Electrical Engineering
621.38152 VAS-P 2008 9073 (Browse shelf) Available 0009073
Total holds: 0

Includes bibliographical references (pages 309-324) and index.

Chapter 1 Failures of Semiconductor Device 1 -- 1.1 Catastrophic and degradation failure mechanisms 3 -- 1.2 Transistor: structure, operation regimes, failure mechanisms 5 -- 1.2.1 Bipolar transistors 6 -- 1.2.2 Silicon field effect transistors 9 -- 1.2.3 Compound semiconductor field-effect transistors 11 -- 1.2.4 Specifics of transistor applications 13 -- 1.3 Operation regime and reliability 13 -- 1.3.1 Time before failure and failure rate 13 -- 1.3.2 Safe operating area 16 -- 1.4 Breakdown and Instability 19 -- Chapter 2 Theoretical Basis of Current Instability in Transistor Structures 25 -- 2.1 Basic equations 25 -- 2.2 Current filamentation in uniform structures 29 -- 2.2.1 Fluctuation instability 29 -- 2.2.2 Bifurcation, soft and abrupt filamentation 32 -- 2.3 Current filamentation in nonuniform structures 37 -- 2.3.1 Splitting of I-V characteristic 38 -- 2.3.2 Critical regime 40 -- 2.3.3 Edge and ordinary filaments 41 -- 2.3.4 Localization and stability of solitary filaments 43 -- 2.3.5 Current filamentation at positive differential conductivity 48 -- 2.4 Real inhomogeneity and current filamentation 50 -- Chapter 3 Thermal Instability Mechanism 53 -- 3.1 Emitter current filamentation in bipolar transistors 53 -- 3.1.1 Some experimental results 53 -- 3.1.2 Thermoelectrical model and stability criteria 55 -- 3.1.3 Informative characteristic 63 -- 3.1.4 Local defect and inhomogeneity impact 66 -- 3.1.5 Delay time 74 -- 3.1.6 Three-dimensional thermal model and design optimization 78 -- 3.1.7 Current filamentation in dynamic regimes 82 -- 3.2 Filamentation of channel current in MOSFETs 87 -- 3.2.1 Criterion for channel current filamentation 88 -- 3.3 Thermal breakdown 92 -- 3.3.1 Thermal breakdown in bipolar transistors 94 -- 3.3.2 Thermal breakdown in MOSFETs 99 -- 3.3.3 Thermal breakdown in GaAs MESFETs 102 -- 3.4 Avalanche-thermal breakdown 104 -- 3.5 Peculiarities of avalanche thermal instability in JFETs and MESFETs 108 -- Chapter 4 Isothermal Current Instability in Silicon BJT and MOSFETs 111 -- 4.1 Avalanche injection in elementary semiconductor structures 111 -- 4.1.1 Reversed biased p-n junction 112 -- 4.1.2 Avalanche breakdown in p-i-n diode 115 -- 4.1.3 Avalanche injection in n[superscript +]-n-n[superscript +] diode 116 -- 4.1.4 Kinetics of avalanche injection in p-n-n[superscript +] structures 118 -- 4.2 Isothermal instability in bipolar transistors 120 -- 4.2.1 Isothermal instability in diode operation regimes 121 -- 4.2.2 Avalanche injection in common-emitter circuit 124 -- 4.2.3 Avalanche injection in common-base circuit 130 -- 4.2.4 Criteria of isothermal current filamentation 132 -- 4.2.5 Some ways of isothermal instability suppression 136 -- 4.3 Isothermal current instability in MOSFET 137 -- 4.3.1 Field distribution in MOSFET structures and critical operation regimes 139 -- 4.3.2 Isothermal current filamentation in power planar MOSFETs in dc regime 142 -- 4.3.3 Isothermal instability in vertical MOSFETs 152 -- 4.4 Numerical simulation of electrical instability and current filamentation in NMOS devices 157 -- Chapter 5 Isothermal Instability in Compound Semiconductor Devices 169 -- 5.1 Avalanche breakdown in MESFETs 170 -- 5.2 Drain-source avalanche-injection instability and filamentation 177 -- 5.2.1 Experimental observation of current instability and filamentation in GaAs MESFETs 178 -- 5.2.2 Specific of electrical burnout in large-signal operation 183 -- 5.2.3 Current instability and filamentation in MODFET structures and short-channel MESFETs 187 -- 5.2.4 Numerical simulation of the avalanche-injection instability in MESFET structures 191 -- 5.2.5 Numerical simulation of the avalanche-injection filamentation in GaAs structures 198 -- 5.2.6 The role of contact n[superscript +]-regions. Multiple current filament formation 203 -- 5.3 Double avalanche-injection instability and filamentation at Schottky gate breakdown in MESFETs 209 -- 5.4 Microplasma effect at the MESFET breakdown 219 -- 5.4.1 Microplasma at the Schottky gate breakdown in MESFETs 220 -- 5.4.2 Microplasma formation in n[superscript +]-i-n[superscript +] structures 232 -- Chapter 6 Degradation Instabilities 237 -- 6.1 Electromigration 238 -- 6.2 Mutual diffusion of materials 245 -- 6.3 Charge instability 249 -- 6.4 Degradation phenomena in dynamic regimes 253 -- 6.5 Degradation instability 254 -- Chapter 7 Conductivity Modulation in ESD devices 259 -- 7.1 ESD Design 259 -- 7.1.1 The field of ESD protection 260 -- 7.1.2 ESD devices 264 -- 7.2 Spatial thermal runway in ESD devices 270 -- 7.3 3D Simulation of current instability in snapback NMOS devices 274 -- 7.4 Conductivity modulation in BJT and Bipolar SCRs 275 -- 7.5 Device-level physical ESD design 282 -- 7.5.1 Self-Protection 282 -- 7.5.2 Mixed device-circuit dual-mode solutions 286 -- 7.6 Device-level positive and negative feedback 290 -- Chapter 8 Physical Approach to Reliability 297 -- 8.1 Reliability assurance at the stage of its development 298 -- 8.2 Reliability assurance on a production phase 301 -- 8.3 Estimation of reliability using accelerated tests 304.

"Physical Limitations of Semiconductor Devices provides an in-depth understanding of the phenomena and regularities that play a critical role in the limitation of semiconductor device capabilities. It discusses how thermo-electrical breakdown, conductivity modulation, and electrical and spatial current instability phenomena affect the limitations of the devices. The authors give examples of the phenomena ranging from elementary semiconductor diode structures to discrete power and integrated components. They also show circuits for both silicon and compound semiconductor devices." "The material covers different levels of complexity including phenomenological, analytical, and numerical simulation. The material also explores the most complex phenomena of current filamentation and the impact of local structure defects, physical safe operating area limitations, and various scenarios of catastrophic failures in semiconductor devices. The emphasis of the book is on the physical approach to reliability assurance, safe operating area, and ESD problems." "Physical Limitations of Semiconductor Devices provides an important link between the theoretical aspects of the physics of semiconductor devices, non-linear physics, and the practical applications of microelectronics."--Jacket.

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