Semiconductor device fundamentals / Robert F. Pierret.
By: Pierret, Robert F
Material type:
TextPublisher: New Dehli : Pearson, 2006Description: xxiii, 792 p. : ill. ; 25 cmISBN: 9788177589771Other title: Semiconductor device fundamentals : With computer-based exercises and homework problemsSubject(s): SemiconductorsDDC classification: 621.38152 | Item type | Current location | Call number | Copy number | Status | Date due | Barcode | Item holds |
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Books
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Namal Library | 621.38152 PIE-S 2006 10494 (Browse shelf) | 1 | Available | 0010494 | ||
| Reference | Namal Library Reference | 621.38152 PIE-S 2006 10495 (Browse shelf) | 2 | Not for loan | 0010495 |
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| 621.3815077 THE-P 2011 3160 Principles of electronic devices and circuits : | 621.38151 DHI-E 2000 4112 electronic components and materials : | 621.38152 BRE-P 1999 512 The physics of semiconductors : | 621.38152 PIE-S 2006 10494 Semiconductor device fundamentals / | 621.38152 PIE-S 2006 10495 Semiconductor device fundamentals / | 621.38152 SHA-S 3001 Solid state devices and circuits / | 621.38152 STR-S 2011 3056 Solid state electronic devices / |
"With computer-based exercises and homework problems"--Cover.
Includes bibliographical references and index.
PART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
R1. Part I Supplement and Review.
PART II: A. PN JUNCTION DIODES.
PN Junction Electrostatics.
PN Junction Diode -- I-V Characteristics.
PN Junction Diode -- Small-Signal Admittance.
PN Junction Diode -- Transient Response.
Optoelectronic Diodes.
PART III: BJTS AND OTHER JUNCTION DEVICES.
BJT Fundamentals.
BJT Static Characteristics.
BJT Dynamic Response Modeling.
PNPN Devices.
MS Contacts and Schottky Diodes.
R2. Part II Supplement and Review.
PART IV: FIELD EFFECT DEVICES.
Field Effect Introduction -- the J-FET and MESFET.
MOS Fundamentals.
MOSFETs -- The Essentials.
Nonideal MOS.
Modern FET Structures.
R3. Part III Supplement and Review.
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