Semiconductor device fundamentals / Robert F. Pierret.

By: Pierret, Robert FMaterial type: TextTextPublication details: New Dehli : Pearson, 2006Description: xxiii, 792 p. : ill. ; 25 cmISBN: 9788177589771Other title: Semiconductor device fundamentals : With computer-based exercises and homework problemsSubject(s): SemiconductorsDDC classification: 621.38152
Contents:
PART I: SEMICONDUCTOR FUNDAMENTALS. Semiconductors -- A General Introduction. Carrier Modeling. Carrier Action. Basics of Device Fabrication. R1. Part I Supplement and Review. PART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. R2. Part II Supplement and Review. PART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures. R3. Part III Supplement and Review.
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Holdings
Item type Current library Call number Copy number Status Date due Barcode Item holds
Books Books Namal Library
621.38152 PIE-S 2006 10494 (Browse shelf (Opens below)) 1 Available 0010494
Reference Namal Library
Reference
621.38152 PIE-S 2006 10495 (Browse shelf (Opens below)) 2 Not for loan 0010495
Total holds: 0

"With computer-based exercises and homework problems"--Cover.

Includes bibliographical references and index.

PART I: SEMICONDUCTOR FUNDAMENTALS.
Semiconductors -- A General Introduction.
Carrier Modeling.
Carrier Action.
Basics of Device Fabrication.
R1. Part I Supplement and Review.
PART II: A. PN JUNCTION DIODES.
PN Junction Electrostatics.
PN Junction Diode -- I-V Characteristics.
PN Junction Diode -- Small-Signal Admittance.
PN Junction Diode -- Transient Response.
Optoelectronic Diodes.
PART III: BJTS AND OTHER JUNCTION DEVICES.
BJT Fundamentals.
BJT Static Characteristics.
BJT Dynamic Response Modeling.
PNPN Devices.
MS Contacts and Schottky Diodes.
R2. Part II Supplement and Review.
PART IV: FIELD EFFECT DEVICES.
Field Effect Introduction -- the J-FET and MESFET.
MOS Fundamentals.
MOSFETs -- The Essentials.
Nonideal MOS.
Modern FET Structures.
R3. Part III Supplement and Review.

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