| 000 | 01166cam a2200253 a 4500 | ||
|---|---|---|---|
| 999 |
_c2620 _d2620 |
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| 003 | OSt | ||
| 005 | 20200121043640.0 | ||
| 008 | 931007s1994 nyua g b 001 0 eng | ||
| 020 | _a9788126517909 (pbk) | ||
| 040 | _cNCL | ||
| 082 | 0 | 0 |
_a621.3815 _bGHA-V 2013 3801 |
| 100 | 1 |
_aGhandhi, Sorab Khushro, _d1928- |
|
| 245 | 1 | 0 |
_aVLSI fabrication principles : _bsilicon and gallium arsenide / _cSorab K. Ghandhi. |
| 250 | _a2nd ed. | ||
| 260 |
_aNew York : _bWiley, _cc1994. |
||
| 300 |
_axxiv, 834 p. : _bill. ; _c25 cm. |
||
| 504 | _aIncludes bibliographical references and index. | ||
| 505 | _aCONTENTS Chapter 1: Material Properties Chapter 2: Phase diagrams and solid stability Chapter 3: Crystal growth and doping Chapter 4: Diffusion Chapter 5: Epitaxy Chapter 6: Ion Implantation Chapter 7: Native Films Chapter 8: Deposited films Chapter 9: Etching and cleaning Chapter 10: Lithographic process Chapter 11: Device and Circuit fabrication | ||
| 650 | 0 |
_aIntegrated circuits _xVery large scale integration. |
|
| 650 | 0 | _aSilicon. | |
| 650 | 0 | _aGallium arsenide. | |
| 740 | 0 | _aVery large scale integration fabrication principles. | |
| 942 |
_2ddc _cBK |
||