000			01627cam a2200253 a 4500
001			3033076
003			OSt
005			20190917111847.0
008			950419s20061996ii a b 001 0 eng
010			_a 95017387
020			_a9788177589771
040			_cNCL
082	0	0	_a621.38152 _bPIE-S 2006 10494
100	1		_aPierret, Robert F.
245	1	0	_aSemiconductor device fundamentals / _cRobert F. Pierret.
246		4	_aSemiconductor device fundamentals : _bWith computer-based exercises and homework problems
260			_aNew Dehli : _bPearson, _c2006
300			_axxiii, 792 p. : _bill. ; _c25 cm.
500			_a"With computer-based exercises and homework problems"--Cover.
504			_aIncludes bibliographical references and index.
505			_aPART I: SEMICONDUCTOR FUNDAMENTALS. Semiconductors -- A General Introduction. Carrier Modeling. Carrier Action. Basics of Device Fabrication. R1. Part I Supplement and Review. PART II: A. PN JUNCTION DIODES. PN Junction Electrostatics. PN Junction Diode -- I-V Characteristics. PN Junction Diode -- Small-Signal Admittance. PN Junction Diode -- Transient Response. Optoelectronic Diodes. PART III: BJTS AND OTHER JUNCTION DEVICES. BJT Fundamentals. BJT Static Characteristics. BJT Dynamic Response Modeling. PNPN Devices. MS Contacts and Schottky Diodes. R2. Part II Supplement and Review. PART IV: FIELD EFFECT DEVICES. Field Effect Introduction -- the J-FET and MESFET. MOS Fundamentals. MOSFETs -- The Essentials. Nonideal MOS. Modern FET Structures. R3. Part III Supplement and Review.
650		0	_aSemiconductors.
942			_2ddc _cBK
999			_c7752 _d7752