VLSI fabrication principles : silicon and gallium arsenide /
Ghandhi, Sorab Khushro, 1928-
VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi. - 2nd ed. - New York : Wiley, c1994. - xxiv, 834 p. : ill. ; 25 cm.
Includes bibliographical references and index.
CONTENTS
Chapter 1: Material Properties
Chapter 2: Phase diagrams and solid stability
Chapter 3: Crystal growth and doping
Chapter 4: Diffusion
Chapter 5: Epitaxy
Chapter 6: Ion Implantation
Chapter 7: Native Films
Chapter 8: Deposited films
Chapter 9: Etching and cleaning
Chapter 10: Lithographic process
Chapter 11: Device and Circuit fabrication
9788126517909 (pbk)
Integrated circuits--Very large scale integration.
Silicon.
Gallium arsenide.
621.3815 / GHA-V 2013 3801
VLSI fabrication principles : silicon and gallium arsenide / Sorab K. Ghandhi. - 2nd ed. - New York : Wiley, c1994. - xxiv, 834 p. : ill. ; 25 cm.
Includes bibliographical references and index.
CONTENTS
Chapter 1: Material Properties
Chapter 2: Phase diagrams and solid stability
Chapter 3: Crystal growth and doping
Chapter 4: Diffusion
Chapter 5: Epitaxy
Chapter 6: Ion Implantation
Chapter 7: Native Films
Chapter 8: Deposited films
Chapter 9: Etching and cleaning
Chapter 10: Lithographic process
Chapter 11: Device and Circuit fabrication
9788126517909 (pbk)
Integrated circuits--Very large scale integration.
Silicon.
Gallium arsenide.
621.3815 / GHA-V 2013 3801